STRUCTURAL AND ELECTRICAL-PROPERTIES OF BISMUTH TELLURIDE FILMS GROWN BY THE MOLECULAR-BEAM TECHNIQUE

被引：47

作者：

CHARLES, E

GROUBERT, E

BOYER, A

机构：

[1] Univ des Sciences et Techniques du, Languedoc, Montpellier, Fr, Univ des Sciences et Techniques du Languedoc, Montpellier, Fr

来源：

关键词：

D O I：

10.1007/BF01730298

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：575 / 577

页数：3

共 7 条

[1] BOYER A, 1984, 4EMES JOURNEES NAT M, P276
[2] CHARLES E, 1986, JUN INT C SENS 86 PA, P9
[3] CRYSTAL GROWTH + ORIENTATION IN SPUTTERED FILMS OF BISMUTH TELLURIDE
FRANCOMBE, MH
[J]. PHILOSOPHICAL MAGAZINE, 1964, 10 (108): : 989 - &
[4] GOLDSMID HJ, 1958, P PHYS SOC, V4, P633
[5] LOVETT DR, 1977, SEMIMETALS NARROW BA, P181
[6] MACHET C, 1982, VIDE COUCHES MINCES, V211, P125
[7] SPUTTERED BI2TE3 AND PBTE THIN-FILMS
SHING, YH
CHANG, Y
MIRSHAFII, A
HAYASHI, L
ROBERTS, SS
JOSEFOWICZ, JY
TRAN, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 503 - 506