PREPARATION OF N-TYPE DOPED FES2 THIN-FILMS

被引：42

作者：

FERRER, IJ

CABALLERO, F

HERAS, CD

SANCHEZ, C

机构：

[1] Dpto. de Física de Materiales, C-IV, U.A.M. Cantoblanco

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 04期

关键词：

D O I：

10.1016/0038-1098(94)90598-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

N-type pyrite thin films have been prepared by sulfuration at 350 degrees C of flash evaporated Fe-X (X =Al, Cu, Ni) layers. Physical and structural properties have been investigated. XRD showed pyrite structure. Room temperature dark resistivity of the films varies from 0.21 to 7.10(-4) Omega.cm depending on the impurity concentration. Hall mobilities are between 1 and 10(4) cm(2)/V.s. Optical properties are also drastically affected by doping.

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页码：349 / 352

页数：4

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