RECOIL-ENHANCED AND FIELD-ENHANCED DIFFUSION

[1] BARANOVA AS, 1974, SOV PHYS SEMICOND+, V7, P1151

[2] Bourgoin J. C., 1975, Lattice Defects in Semiconductors, 1974, P149

[3] BOURGOIN JC, 1973, J CHEM PHYS, V59, P4042, DOI [10.1063/1.1680596, 10.1063/1.433143]

[4] BOURGOIN JC, 1975, POINT DEFECTS SOLIDS, V2, P1

[5] MOLINE RA, 1974, ATOMIC COLLISIONS SO, V1, P159

[6] Nelson R. S., 1969, Radiation Effects, V2, P47, DOI 10.1080/00337576908235579

[7] PEAK D, TO BE PUBLISHED

[8] ION DRIFT IN AN N-P JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 291 - 302

[9] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[10] STROUD PT, 1970, ION IMPLANTATION, P116

[1] BARANOVA AS, 1974, SOV PHYS SEMICOND+, V7, P1151

[2] Bourgoin J. C., 1975, Lattice Defects in Semiconductors, 1974, P149

[3] BOURGOIN JC, 1973, J CHEM PHYS, V59, P4042, DOI [10.1063/1.1680596, 10.1063/1.433143]

[4] BOURGOIN JC, 1975, POINT DEFECTS SOLIDS, V2, P1

[5] MOLINE RA, 1974, ATOMIC COLLISIONS SO, V1, P159

[6] Nelson R. S., 1969, Radiation Effects, V2, P47, DOI 10.1080/00337576908235579

[7] PEAK D, TO BE PUBLISHED

[8] ION DRIFT IN AN N-P JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 291 - 302

[9] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[10] STROUD PT, 1970, ION IMPLANTATION, P116