11.5-PERCENT SOLAR CONVERSION EFFICIENCY IN THE PHOTOCATHODICALLY PROTECTED P-INP-V3+-V2+-HCL-C SEMICONDUCTOR LIQUID JUNCTION CELL

被引：122

作者：

HELLER, A

MILLER, B

THIEL, FA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 04期

关键词：

D O I：

10.1063/1.92307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：282 / 284

页数：3

共 18 条

[1] THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].

BARD, AJ ;

BOCARSLY, AB ;

FAN, FRF ;

WALTON, EG ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677

[2] PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING [J].

BOCARSLY, AB ;

BOOKBINDER, DC ;

DOMINEY, RN ;

LEWIS, NS ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3683-3688

[3] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].

CASEY, HC ;

BUEHLER, E .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249

[4] SEMICONDUCTOR ELECTRODES .24. BEHAVIOR AND PHOTOELECTROCHEMICAL CELLS BASED ON P-TYPE GA-ARSENIC IN AQUEOUS-SOLUTIONS [J].

FAN, FRF ;

BARD, AJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3677-3683

[5] 7.3-PERCENT EFFICIENT THIN-FILM, POLYCRYSTALLINE N-GAAS SEMICONDUCTOR LIQUID JUNCTION SOLAR-CELL [J].

HELLER, A ;

MILLER, B ;

CHU, SS ;

LEE, YT .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1979, 101 (25) :7633-7634

[6] AN EFFICIENT PHOTO-CATHODE FOR SEMICONDUCTOR LIQUID JUNCTION CELLS - 9.4-PERCENT SOLAR CONVERSION EFFICIENCY WITH P-INP-VCL3-VCL2-HCL-C [J].

HELLER, A ;

MILLER, B ;

LEWERENZ, HJ ;

BACHMANN, KJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (21) :6555-6556

[7] COMBINED RUTHENIUM LEAD SURFACE-TREATMENT OF GALLIUM-ARSENIDE PHOTOANODES [J].

HELLER, A ;

LEWERENZ, HJ ;

MILLER, B .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (06) :592-596

[8]

Heller A., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1253

[9] EFFECT OF RUTHENIUM IONS ON GRAIN-BOUNDARIES IN GALLIUM-ARSENIDE THIN-FILM PHOTO-VOLTAIC DEVICES [J].

JOHNSTON, WD ;

LEAMY, HJ ;

PARKINSON, BA ;

HELLER, A ;

MILLER, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :90-95

[10]

KAUTEK W, 1979, BER BUNSEN PHYS CHEM, V83, P1000, DOI 10.1002/bbpc.19790831010

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