POLYACETYLENE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引:1
作者
CHEN, YC
CHENG, CC
CHEN, MH
HUANG, KC
机构
[1] Institute of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9A期
关键词
POLYACETYLENE; MESFET; DEPLETION MODE; CHANNEL MODULATION; PINCH-OFF;
D O I
10.1143/JJAP.30.2101
中图分类号
O59 [应用物理学];
学科分类号
摘要
Planar and sandwich types of polyacetylene metal-semiconductor field-effect transistors (MESFETs) have been fabricated. The current-vs-voltage (I-V) characteristics show that both types of MESFETs are depletion-mode transistors with low transconductances of about 10(-6)-10(-7) s. Channel modulation has been observed in both types of transistors; however, pinch-off cannot be found even at the drain voltage of up to about -30 V. The performances of both types of MESFETs have been compared and the effects on the performance of the transistor have been discussed.
引用
收藏
页码:2101 / 2106
页数:6
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