AMMONIUM-SALT-ADDED SILICA SLURRY FOR THE CHEMICAL-MECHANICAL POLISHING OF THE INTERLAYER DIELECTRIC FILM PLANARIZATION IN ULSIS

被引：33

作者：

HAYASHI, Y ^{[1
]}

SAKURAI, M ^{[1
]}

NAKAJIMA, T ^{[1
]}

HAYASHI, K ^{[1
]}

SASAKI, S ^{[1
]}

CHIKAKI, S ^{[1
]}

KUNIO, T ^{[1
]}

机构：

[1] NEC CORP LTD,DIV MICROCOMP,SAGAMIHARA,KANAGAWA 229,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

CHEMICAL MECHANICAL POLISHING (CMP); PLANARIZATION; INTERLAYER DIELECTRIC FILM; SILICA PARTICLES; MULTILEVEL INTERCONNECTION;

D O I：

10.1143/JJAP.34.1037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on the theory of colloid, a new KOH-free silica slurry is developed for chemical mechanical polishing (CMP) to planarize the interlayer dielectric films in ULSI's. The ammonium salt addition to the slurries of pH = 6-7 promotes the silica particle agglomeration in the slurry, and enlarges the effective abrasive particle size. The particle agglomeration yields a high polishing rate due to increasing of the mechanical effect, and good particle removability with scrub cleaning is achieved. The ammonium salt-added slurry provides the high-speed CMP without alkaline-metal contamination to the LSI fabrication line.

引用

页码：1037 / 1042

页数：6

共 6 条

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HAYASHI, Y ;

TAKAHASHI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3A) :1060-1063

[3]

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[4]

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[5]

UTTRECHT RR, 1991, 8TH P INT IEEE VLSI, P20

[6]

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