APPLICATION OF A HIGH-THROUGHPUT ELECTRON-BEAM SYSTEM FOR 0.3 MU-M LARGE-SCALE INTEGRATION

被引：6

作者：

MIZUNO, F

KATO, M

HAYAKAWA, H

SATO, K

HASEGAWA, K

SAKITANI, Y

SAITOU, N

MURAI, F

SHIRAISHI, H

UCHINO, SI

机构：

[1] HITACHI LSI ENGN CO LTD,OME,TOKYO 198,JAPAN

[2] HITACHI LTD,DIV INSTRUMENT,KATSUTA,IBARAKI 312,JAPAN

[3] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3440 / 3443

页数：4

共 4 条

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[3]

Sakitani Y., 1991, Hitachi Review, V40, P373

[4] INSOLUBILIZATION MECHANISM OF A CHEMICAL AMPLIFICATION NEGATIVE-RESIST SYSTEM UTILIZING AN ACID-CATALYZED SILANOL CONDENSATION REACTION [J].

SHIRAISHI, H ;

FUKUMA, E ;

HAYASHI, N ;

TADANO, K ;

UENO, T .

CHEMISTRY OF MATERIALS, 1991, 3 (04) :621-625

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