INERT-GAS-BUBBLE FORMATION IN THE IMPLANTED METAL-SI SYSTEM

被引：13

作者：

TSAUR, BY ^{[1
]}

LIAU, ZL ^{[1
]}

MAYER, JW ^{[1
]}

SHENG, TT ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.326475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Inert-gas-bubble formation has been observed as a result of ion bombardment of thin metal films (Cr, V, Ni, Ti, or Pd) deposited on Si substrates. Rutherford backscattering measurements and cross-sectional transmission electron microscopic analyses indicated that the gas bubbles were formed predominantly near the interface between the Si substrate and the surface layer. In addition, pronounced mixing between Si and metal was observed. Both bubble formation and Si-metal intermixing are interpreted in terms of ion-induced atomic migration within the collision cascade around the ion track. With increasing ion dose, the number of gas atoms trapped in the bubbles at the interface continued to grow and the surface layer peeled off at high doses.

引用

页码：3978 / 3984

页数：7

共 17 条

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