ALKALI-METAL CHAINS ON THE GAAS(110) SURFACE

被引:2
作者
BATRA, IP [1 ]
FONG, CY [1 ]
机构
[1] UNIV CALIF DAVIS,DEPT PHYS,DAVIS,CA 95616
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 03期
关键词
D O I
10.1116/1.577436
中图分类号
TB3 [工程材料学];
学科分类号
0805 [材料科学与工程]; 080502 [材料学];
摘要
It has been reported that Cs adsorbed at low coverages on GaAs(110) forms linear one-dimensional chains which usually appeared in pairs. The alkali metal atoms in the two chains (called primary and secondary) are shifted along the [110BAR] direction by an amount a/unroofed-radical 2, where a is the bulk cubic lattice constant of GaAs. It is an unresolved issue as to why the chains appear in pairs adjacent to each other. We suggest that the primary and secondary chains can be really viewed as a single chain with a zig-zag structure. One can then compare the calculated total energy for a single linear chain (of double the density) with the total energy for a zig-zag chain. The latter is found to be a lower energy structure in agreement with the scanning tunneling microscopy observations. Physical interactions responsible for stabilizing the zig-zag structure are briefly discussed.
引用
收藏
页码:1962 / 1963
页数:2
相关论文
共 7 条
[1]
ALLAN G, IN PRESS PHYS REV B
[2]
GAPLESS PEIERLS TRANSITION [J].
BATRA, IP .
PHYSICAL REVIEW B, 1990, 42 (14) :9162-9165
[3]
STRUCTURE OF CS ON GAAS(110) AS DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].
FIRST, PN ;
DRAGOSET, RA ;
STROSCIO, JA ;
CELOTTA, RJ ;
FEENSTRA, RM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2868-2872
[4]
ELECTRONIC-PROPERTIES OF NA OVERLAYERS ON THE GAAS(110) SURFACE [J].
FONG, CY ;
YANG, LH ;
BATRA, IP .
PHYSICAL REVIEW B, 1989, 40 (09) :6120-6123
[5]
EFFICACIOUS FORM FOR MODEL PSEUDOPOTENTIALS [J].
KLEINMAN, L ;
BYLANDER, DM .
PHYSICAL REVIEW LETTERS, 1982, 48 (20) :1425-1428
[6]
SCHOTTKY-BARRIER FORMATION AT LOW METAL COVERAGES - A CONSISTENT MOLECULAR-ORBITAL CALCULATION FOR K ON GAAS(110) [J].
ORTEGA, J ;
FLORES, F .
PHYSICAL REVIEW LETTERS, 1989, 63 (22) :2500-2503
[7]
WHITMAN LJ, 1990, B AM PHYS SOC, V35, P226