OPTICAL ANISOTROPY OF ORDERED SB LAYERS ON III-V (110) SURFACES

被引：9

作者：

ESSER, N ^{[1
]}

RICHTER, W ^{[1
]}

RESCHESSER, U ^{[1
]}

CHIARADIA, P ^{[1
]}

GOLETTI, C ^{[1
]}

MORETTI, L ^{[1
]}

机构：

[1] UNIV ROMA TOR VERGATA,DIPARTIMENTO FIS,ROME,ITALY

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 70卷 / 03期

关键词：

D O I：

10.1080/01418639408240225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ordered Sb monolayers and multilayers on GaAs (110) and InP (110) have been studied in in situ by measuring the optical anisotropy (reflectance anisotropy spectroscopy) and the difference of the reflectivity with respect to the clean surface for linear polarized light (surface differential reflectance). The preparation was performed by annealing a 4-5 multilayer thick Sb film on ultrahigh vacuum-cleaved InP(110) and GaAs(110) substrates, which induces an ordered multilayer film of a metastable crystal structure termed 'substrate-stabilized structure'. Annealing to higher temperatures can be utilized to prepare a highly ordered monolayer film with a pseudomorphic lattice structure. Both monolayers and multilayers have a geometrically anisotropic structure owing to the formation of Sb chains, which are derived either from the pseudomorphic growth or from the double-layer structure of the Sb crystal lattice, respectively. The substrate-stabilized multilayers show a strong optical anisotropy of approximately 2-3% at 1.7 eV photon energy on both InP and GaAs substrates which is related to the electronic structure of the multilayer. The ordered monolayers exhibit optical anisotropies of comparable strength around 1.8 to 2.6 eV on GaAs(110) and 2.0 to 2.7 eV on InP(110), which can be assigned to transitions between the electronic surface states.

引用

页码：507 / 519

页数：13

共 34 条

[1] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].