OPTICAL AND MORPHOLOGICAL PROPERTIES OF LIGHT-EMITTING POROUS SILICON PREPARED BY CHEMICAL DISSOLUTION OF SILICON-WAFERS

被引：20

作者：

AMATO, G ^{[1
]}

机构：

[1] IST NAZL FIS MAT,TURIN,ITALY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 4A期

关键词：

POROUS SILICON; PHOTOLUMINESCENCE; QUANTUM EFFECTS; CHEMICAL ETCHING; OPTICAL PROPERTIES; MORPHOLOGY;

D O I：

10.1143/JJAP.34.1716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong Light emission has been observed in porous silicon layers prepared by immersing highly doped silicon wafers in a HF/HNO3/H2O etching solution. Morphological information has been obtained through porosity mea surements, scanning electron microscopy (SEM), scanning tunnelling microscopy (STM) and Raman spectroscopy. The material optical properties have been investigated by photoluminessence (PL) and photoacoustic (PAS) spectroscopies. The image obtained shows that in chemically prepared porous silicon (CPS), three phases, namely, macroporous, mesoporous and microporous, exist. SiOx, c-Si, and voids are suggested to affect the optical response of the layers. Comparisons of PL spectra of CPS and electrochemically prepared PS (EPS) samples with the same and higher porosity values reveal marked similarities, suggesting that carrier confinement in nanometer-sized structures plays a keg role in the light-emission process.

引用

页码：1716 / 1722

页数：7

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