CHARACTERIZATION OF GAAS/(GAAS)N(ALAS)M SURFACE-EMITTING LASER STRUCTURES THROUGH REFLECTIVITY AND HIGH-RESOLUTION ELECTRON-MICROSCOPY MEASUREMENTS

被引：51

作者：

FAIST, J

GANIERE, JD

BUFFAT, P

SAMPSON, S

REINHART, FK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.343488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1023 / 1032

页数：10

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