ION-IMPLANTATION IN PARASEXIPHENYL - IMPLANTATION CONDITIONS EFFECTS ON PHYSICAL-PROPERTIES OF THIN-FILMS

被引：2

作者：

ATHOUEL, L ^{[1
]}

FROYER, G ^{[1
]}

SALVI, M ^{[1
]}

GAUNEAU, M ^{[1
]}

LOUARN, G ^{[1
]}

LEFRANT, S ^{[1
]}

MOLITON, A ^{[1
]}

机构：

[1] UNIV LIMOGES,LEPOFI,F-87060 LIMOGES,FRANCE

来源：

JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE | 1992年 / 89卷 / 05期

关键词：

D O I：

10.1051/jcp/1992891279

中图分类号：

Q5 [生物化学]; Q7 [分子生物学];

学科分类号：

071010 ; 081704 ;

摘要：

Two different alkali ions were used to study the role of the ion size on the properties of parasexiphenyl after ion implantation. Cesium ions lead to more pronounced degradations, that is the ceiling fluence is reached with fluence as low as 10(14) ions/cm2. Broken C-H bonds would rearrange themselves into a carbon graphite rich materials or even a diamond like carbon. Oxygen and nitrogen are incorporated upon taking the samples to open air.

引用

页码：1279 / 1284

页数：6

共 4 条

[1]

ATHOUEL L, J CHIM PHYS

[2]

FAID K, J CHIM PHYS

[3] SEEBECK-COEFFICIENT AND CONDUCTION-MECHANISMS IN ION-IMPLANTATION-DOPED ELECTROACTIVE POLYMERS (POLYPARAPHENYLENE) [J].