EFFECT OF NI ON GRAPHITE THIN-FILM FORMATION FROM ORGANIC MATERIALS BY CHEMICAL-VAPOR-DEPOSITION

被引：19

作者：

YUDASAKA, M ^{[1
]}

KIKUCHI, R ^{[1
]}

MATSUI, T ^{[1
]}

TASAKA, K ^{[1
]}

OHKI, Y ^{[1
]}

YOSHIMURA, S ^{[1
]}

OTA, E ^{[1
]}

机构：

[1] GUNMA UNIV,FAC ENGN,DEPT CHEM,KIRYU,GUMMA 376,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.579533

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two functions of Ni in the process of graphite thin-film formation from organic materials by chemical vapor deposition (CVD) were studied. When dehydrogenation of a certain organic material was enhanced by Ni during CVD at 600 and 700 degrees C, the graphite thin film could be formed on Ni at these temperatures. On the other hand, a lot of organic materials changed into graphite by CVD on Ni above 800 degrees C, which corresponds to the obtained result that Ni deposited on disordered graphite changed the disordered graphite to crystalline one by heat treatment above 800 degrees C. (C) 1995 American Vacuum Society.

引用

页码：2142 / 2145

页数：4

共 8 条

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[8]

However, the dehydrogenation is not a sufficient condition

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