POLARIZATION DEPENDENCE OF OPTOELECTRONIC PROPERTIES IN QUANTUM DOTS AND QUANTUM WIRES - CONSEQUENCES OF VALENCE-BAND MIXING

被引：29

作者：

WILLATZEN, M ^{[1
]}

TANAKA, T ^{[1
]}

ARAKAWA, Y ^{[1
]}

SINGH, J ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 03期

关键词：

D O I：

10.1109/3.286150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic bandstructure in quantum dots and quantum wires is studied, including the valence-band mixing effects. Based on the bandstructure, results for the polarization dependence of absorption and gain (at room temperature) are examined. The related differential gain and the alpha-parameter is also studied. Our results show that it-is extremely important to include valence-band mixing effects in predicting the laser performance of such structures.

引用

页码：640 / 653

页数：14

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