MECHANISM OF BRANCHING AND KINKING DURING VLS CRYSTAL GROWTH

被引：63

作者：

WAGNER, RS

DOHERTY, CJ

机构：

来源：

关键词：

D O I：

10.1149/1.2411032

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：93 / &

共 17 条

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[9] CONTROLLED VAPOR-LIQUID-SOLID GROWTH OF SILICON CRYSTALS [J].

WAGNER, RS ;

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[10] DEFECTS IN SILICON CRYSTALS GROWN BY VLS TECHNIQUE [J].

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