THIN INAS EPITAXIAL LAYERS GROWN ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM DEPOSITION

被引：36

作者：

MEGGITT, BT

PARKER, EHC

KING, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 06期

关键词：

D O I：

10.1063/1.90425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：528 / 530

页数：3

共 14 条

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[3]

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[5] OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES [J].

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HILSUM, C ;

REES, HD .

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[6]

FOXON CT, 1978, J CRYST GROWTH, V45

[7]

GODHINO N, 1970, SOLID STATE ELECT, V13, P47

[8]

Hilsum C., 1961, SEMICONDUCTING 3 5 C

[9]

JAY DC, 1975, J MICROSCOPY, V103, P1

[10] PREPARATION AND PROPERTIES OF EPITAXIAL INAS [J].

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SOLID-STATE ELECTRONICS, 1967, 10 (07) :649-&

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