THIN-FILM SEMICONDUCTOR NOX SENSOR

被引：94

作者：

CHANG, SC

机构：

[1] Electronics Department, General Motors Research Laboratories, Warren

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 12期

关键词：

D O I：

10.1109/T-ED.1979.19790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thin-film semiconductor NOx sensor has been fabricated by reactive RF sputtering from a tin target. The gas detection is based on monitoring the sensor resistance change caused by NOx chemisorption on the sensor surface. The sensor is highly sensitive and selective toward detecting NOx in air. The chemical composition of the film was investigated by AES and ESCA. A simple chemisorption model is presented to explain the observed phenomena. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1875 / 1880

页数：6

共 12 条

[1] ANALYTICAL AND EXPERIMENTAL INVESTIGATION OF EFFECTS OF OXYGEN CHEMISORPTION ON ELECTRICAL CONDUCTIVITY OF CDS [J].