RESEARCH ON YSZ THIN-FILMS PREPARED BY PLASMA-CVD PROCESS

被引：12

作者：

CAO, CB ^{[1
]}

WANG, JT ^{[1
]}

YU, WJ ^{[1
]}

PENG, DK ^{[1
]}

MENG, GY ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA,DEPT MAT SCI & ENGN,HEFEI 230026,PEOPLES R CHINA

来源：

THIN SOLID FILMS | 1994年 / 249卷 / 02期

关键词：

D O I：

10.1016/0040-6090(94)90755-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

YSZ (Y2O3-stabilized ZrO2) films were successfully prepared on a variety of substrates at a low temperature ( < 500 degrees C) by microwave plasma metallorganic chemical vapour deposition (MW-P-MOCVD) with beta-diketone chelates as volatile sources. The layers consist of nanoscale crystallite and the typical deposition rate is 3-6 mu m h(-1). At about 280 degrees C the film interface relaxed, and at 510 degrees C the associated oxygen vacancies were activated. The film grew in a columnar manner. The growth behaviour and phases of the deposits are discussed by proposing a model for the deposition process based on the experimental evidence.

引用

页码：163 / 167

页数：5