PROTON BOMBARDED DOUBLE HETEROSTRUCTURE LEDS

被引：15

作者：

DYMENT, JC ^{[1
]}

SPRINGTHORPE, AJ ^{[1
]}

KING, FD ^{[1
]}

STRAUS, J ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA,ONTARIO,CANADA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 02期

关键词：

D O I：

10.1007/BF02660382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：173 / 193

页数：21

共 16 条

[1]

BIARD JR, 1966, 1966 S P READ, P113

[2] DIRECT-MODULATION EFFICIENCY OF LEDS FOR OPTICAL FIBER TRANSMISSION APPLICATIONS [J].

BURRUS, CA ;

LEE, TP ;

HOLDEN, WS .

PROCEEDINGS OF THE IEEE, 1975, 63 (02) :329-331

[3] RADIANCE OF SMALL-AREA HIGH-CURRENT-DENSITY ELECTROLUMINESCENT DIODES [J].

BURRUS, CA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02) :231-&

[4] OPTICAL AND ELECTRICAL PROPERTIES OF PROTON-BOMBARDED P-TYPE GAAS [J].

DYMENT, JC ;

NORTH, JC ;

DASARO, LA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :207-213

[5] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

DYMENT, JC ;

NORTH, JC ;

MILLER, BI ;

RIPPER, JE ;

DASARO, LA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :726-&

[6]

Ennaceur A., 1971, OPT COMMUN, V31, P47, DOI [DOI 10.1016/0030-4018(71)90157-X, 10.1016/0166-4328(88)90157-x]

[7]

GOODFELLOW RC, 1975, ELECTRONICS LETT, V12, P51

[8] FREQUENCY-RESPONSE OF GAALAS LIGHT-EMITTING-DIODES [J].

HARTH, W ;

HUBER, W ;

HEINEN, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :478-480

[9] CONTINUOUS OPERATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS WITH 30 DEGREES C HALF-LIVES EXCEEDING 1000-H [J].

HARTMAN, RL ;

DYMENT, JC ;

HWANG, CJ ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :181-183

[10] RELIABILITY OF DH GAAS LASERS AT ELEVATED-TEMPERATURES [J].

HARTMAN, RL ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :239-242

← 1 2 →