EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS

被引：20

作者：

WILSHAW, PR ^{[1
]}

FELL, TS ^{[1
]}

COTEAU, MD ^{[1
]}

机构：

[1] DEPT MAT,OXFORD OX1 3PH,ENGLAND

来源：

JOURNAL DE PHYSIQUE IV | 1991年 / 1卷 / C6期

关键词：

D O I：

10.1051/jp4:1991601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The experimental requirements for relating EBIC contrast measurements to the recombination strength of defects in non-ideal specimens is discussed. Three criteria are given which must be met for such an interpretation of measurements to be made. In the second part of the paper the mechanism for recombination at dislocations in silicon is described together with experimental results from clean and decorated dislocations. Details are given of those situations in which copper contamination does not increase dislocation activity. Finally work on decorated stacking faults in silicon is presented.

引用

页码：3 / 14

页数：12

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