TEMPERATURE EFFECTS ON RADIATION-DAMAGE TO SILICON DETECTORS

被引:44
作者
BARBERIS, E
BOISSEVAIN, JG
CARTIGLIA, N
ELLISON, JA
FERGUSON, P
FLEMING, JK
HOLZSCHEITER, K
JERGER, S
JOYCE, D
KAPUSTINSKY, JS
LESLIE, J
LIETZKE, C
MATTHEWS, JAJ
PALOUNEK, APT
PITZL, D
ROWE, WA
SADROZINSKI, HFW
SKINNER, D
SOMMER, WF
SONDHEIM, WE
WIMPENNY, SJ
ZIOCK, HJ
机构
[1] UNIV CALIF RIVERSIDE,RIVERSIDE,CA 92521
[2] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545
[3] UNIV NEW MEXICO,ALBUQUERQUE,NM 87131
关键词
D O I
10.1016/0168-9002(93)90379-V
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Motivated by the large particle fluences anticipated for the SSC and LHC, we are performing a systematic study of radiation damage to silicon microstrip detectors. Here we report radiation effects on detectors cooled to 0-degrees-C (the proposed operating point for a large SSC silicon tracker) including leakage currents and change in depletion voltage. We also present results on the annealing behavior of the radiation damage. Finally, we report results of charge collection measurements of the damaged detectors made with an Am-241 alpha source.
引用
收藏
页码:373 / 380
页数:8
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