ORDERING OF LOWEST CONDUCTION-BAND STATES IN (GAAS)N/(AIAS)M [111] SUPERLATTICES

被引：21

作者：

IKONIC, Z

SRIVASTAVA, GP

INKSON, JC

机构：

[1] Physics Department, University of Exeter, Exeter EX4 4QL, Stocker Road

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.46.15150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The local empirical pseudopotential theory, implemented via the S-matrix layer method, was used to study the lowest conduction-band-states ordering in (GaAs)n/(AlAs)m (m =n,n+/-1, n+/-2) superlattices grown in the [111] direction. The (GaAsn)/(AlAs)n superlattice is found to have a direct band pp for all n, with far less prominent oscillations of conduction-band-states energies with n than is the case for [100] or [110] growth. Superlattices with m > n, however, are found to have indirect band gaps for small periods.

引用

页码：15150 / 15155

页数：6

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