AN ANALYTICAL APPROACH TO THE CAPACITANCE - VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROJUNCTION HEMTS

被引：30

作者：

CAZAUX, JL ^{[1
]}

NG, GI ^{[1
]}

PAVLIDIS, D ^{[1
]}

CHAU, HF ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE LAB,CTR HIGH FREQUENCY MICROELECTR,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

ELECTRIC PROPERTIES -- Mathematical Models - SEMICONDUCTOR DEVICES -- Heterojunctions;

D O I：

10.1109/16.2541

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The two-dimensional electron gas concentration and capacitance in AlGaAs/GaAs/AlGaAs double-heterojunction high-electron-mobility transistors (DH-HEMTs) are calculated as a function of gate voltage using simple iterative solutions of analytical equations. The results show very good agreement with experimental data, as well as with characteristics predicted by complex numerical methods. The calculations are extended to predict the capacitance-voltage characteristics in the presence of parasitic conduction when the gate does not fully control the two-dimensional gas. The developed charge control and capacitance models are easy and inexpensive to run. They are therefore very useful for microwave circuit designs. Furthermore, they can be used for performance prediction and design optimization of DH-HEMTs. The influence of technological parameters, such as layer thickness and aluminum composition, on device performance are presented.

引用

页码：1223 / 1232

页数：10

共 19 条

[1]

CAZAUX JL, 1988, 18TH P EUR MICR C ST

[2]

CAZAUX JL, UNPUB USE DOUBLE HET

[3] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].