THERMAL-OXIDATION OF HAFNIUM SILICIDE FILMS ON SILICON

被引：49

作者：

MURARKA, SP

CHANG, CC

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 07期

关键词：

D O I：

10.1063/1.92005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：639 / 641

页数：3

共 11 条

[1]

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[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

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[4] KINETICS OF THE THERMAL-OXIDATION OF WSI2 [J].

MOHAMMADI, F ;

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MEINDL, JD .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :529-531

[5] OXIDATION OF TANTALUM DISILICIDE ON POLYCRYSTALLINE SILICON [J].

MURARKA, SP ;

FRASER, DB ;

LINDENBERGER, WS ;

SINHA, AK .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3241-3245

[6] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[7]

MURARKA SP, UNPUBLISHED

[8]

MURARKA SP, 1979, IEDM, P454

[9]

Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

[10]

van Gurp G J, 1977, SEMICONDUCTOR SILICO, P342

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