SILICON PUNCH-THROUGH DIODE

被引:1
作者
KUCHIS, EB
WRIGHT, GT
机构
关键词
D O I
10.1049/el:19680028
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:35 / &
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共 10 条
[1]  
BANYS T, 1964, LIETUVOS FIZIKOS RIN, V4, P479
[2]  
BANYS T, 1966, LIET FIZ RINKINYS, V6, P415
[3]  
BANYS T, 1965, LIETUVOS FIZIKOS RIN, V5, P505
[4]  
KUCHIS EB, 1967, ISMERITIELNAYA TEHNI, V7, P94
[5]   SIMPLIFIED THEORY OF SPACE-CHARGE-LIMITED CURRENTS IN AN INSULATOR WITH TRAPS [J].
LAMPERT, MA .
PHYSICAL REVIEW, 1956, 103 (06) :1648-1656
[6]   ZEITABHANGIGKEIT RAUMLADUNGSBEGRENZTER INJEKTIONSSTROME IN FE-DOTIERTEM P-SILIZIUM [J].
LEMKE, H .
PHYSICA STATUS SOLIDI, 1966, 16 (02) :427-&
[7]   SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS [J].
ROSE, A .
PHYSICAL REVIEW, 1955, 97 (06) :1538-1544
[8]  
WRIGHT GT, 1966, 292 U BIRM EL EL ENG
[9]  
WRIGHT GT, 1960, J BRIT IRE, V20, P337
[10]  
YOUNG JF, 1966, ELECTRON ENG, V38, P461