INTERACTIONS AT METAL-OXIDE AND OXIDE OXIDE INTERFACES STUDIED BY ULTRATHIN-FILM GROWTH ON SINGLE-CRYSTAL OXIDE SUBSTRATES

被引:65
作者
LAD, RJ [1 ]
机构
[1] UNIV MAINE,DEPT PHYS & ASTRON,ORONO,ME 04469
关键词
D O I
10.1142/S0218625X9500011X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This article reviews aspects of the electronic, chemical, and structural properties of metal/oxide and oxide/oxide interfaces which are formed via ultrathin film growth on oxide single-crystal surfaces. The interactions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide substrates and limitations and difficulties in studying these ceramic systems are discussed. The remainder of the article presents experimental observations for several systems involving both metal and oxide ultrathin film growth on stoichiometric NiO(100), TiO2(110), and alpha-Al2O3(<10(1)over bar 2>) surfaces including a discussion of interdiffusion, chemical and electronic interactions, thermal stability, and interfacial impurity effects.
引用
收藏
页码:109 / 126
页数:18
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