ENHANCED STEP WAVINESS ON SIGE(001)-(2X1) SURFACES UNDER TENSILE STRAIN

被引：37

作者：

JONES, DE ^{[1
]}

PELZ, JP ^{[1
]}

XIE, YH ^{[1
]}

SILVERMAN, PJ ^{[1
]}

GILMER, GH ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.75.1570

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling microscopy measurements of thermally cleaned, low Ge content SiGe(001) films under an similar to 1% biaxial tensile strain show large amplitude, quasiperiodic, thermally stable S-B-step undulations alternating with extremely straight S-A steps on extended areas wherever the local step separation L > 20 nm. The wavelength lambda scales roughly with L(1/2) for 20 < L < 120 nm reaches a limiting value between 100 and 200 nm on larger terraces. The measured behavior suggests that the wavy steps are stabilized by surface stress relaxation effects which are enhanced by tensile strain.

引用

页码：1570 / 1573

页数：4

共 31 条

[1] SPONTANEOUS FORMATION OF STRESS DOMAINS ON CRYSTAL-SURFACES [J].