NATURE OF THE BAND-GAP (DIRECT VERSUS INDIRECT) OF SHORT-PERIOD (GAAS)N/(ALAS)N SUPERLATTICES GROWN ALONG THE [111] CONFINEMENT DIRECTION

被引：5

作者：

CINGOLANI, R

TAPFER, L

PLOOG, K

机构：

[1] Max-Planck-Institut für Festkörperforschung

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.103333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on spectroscopic experimental evidence of type II band alignment in a (GaAs)6/(AlAs)6 superlattice grown by molecular beam epitaxy along the (111) direction. This result is in contrast to recent theoretical calculations predicting that the (GaAs)n/(AlAs) n superlattices grown along the (111) direction should be direct for all n's.

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页码：1233 / 1235

页数：3

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