SOME INVESTIGATIONS ON EVAPORATED AU-CDS-TYPE METAL-SEMICONDUCTOR BARRIERS

被引：6

作者：

KOHLER, R

WAUER, L

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 07期

关键词：

D O I：

10.1016/0038-1101(71)90134-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：581 / &

共 12 条

[1] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[2] THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J].

DEWALD, JF .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :615-639

[3]

GOODMAN AM, 1967, J APPL PHYS, V35, P573

[4] ZUR THEORIE DES GERMANIUMGLEICHRICHTERS UND DES TRANSISTORS [J].

KROMER, H .

ZEITSCHRIFT FUR PHYSIK, 1953, 134 (04) :435-450

[5] THIN-FILM CDS DIODES HEAT TREATED IN VARIOUS AMBIENTS [J].

LEARN, AJ ;

SCOTTMON.JA .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2480-&

[6] EVAPORATED THIN FILM CDS DIODE [J].

MARES, GJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (08) :1077-&

[7] METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MEAD, CA .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&

[8] THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS [J].

PADOVANI, FA .

SOLID-STATE ELECTRONICS, 1968, 11 (02) :193-+

[9] SOME COMPUTED AND MEASURED CHARACTERISTICS OF CDS SPACE-CHARGE-LIMITED DIODES [J].

PAGE, DJ .

SOLID-STATE ELECTRONICS, 1966, 9 (03) :255-&

[10]

PAGE DJ, 9 WEST RES LAB PAP

← 1 2 →