PROPERTIES OF THE EXCITONIC EMISSION AT ROOM-TEMPERATURE IN CD0.3ZN0.7S/ZNS STRAINED-LAYER SUPERLATTICES

被引:23
作者
TAGUCHI, T
ENDOH, Y
机构
[1] Department of Electrical Engineering, Osaka University, Suita Osaka
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 6A期
关键词
EXCITON; CDZNS/ZNS STRAINED-LAYER SUPERLATTICE; HIGH-EXCITATION EFFECT; QUANTUM EFFECT; FORBIDDEN TRANSITION;
D O I
10.1143/JJAP.30.L952
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cd0.3Zn0.7S/ZnS multiple-quantum-well strained-layer superlattices with a range of well widths can produce excitonic emissions around 3.4 eV at room temperature (RT), due to the quantum confinement of excitons in the CdZnS wells. The emission spectra of a 41 angstrom Cd0.3Zn0.7S well were extensively studied under high optical excitation. We found a non-linear dependence of the spontaneous RT exciton-emission intensity on the excitation intensity for high excitations. With increasing excitation density, the emission line moves to slightly the lower-photon energy and in addition its linewidth is broadened. A shoulder on higher-energy side of the excitonic spectrum appears above about 100 kW/cm2, which is related to an optical transition associated with a higher excited-level state of the electrons confined in the conduction-band potential well.
引用
收藏
页码:L952 / L955
页数:4
相关论文
共 12 条
  • [1] Endoh Y., 1990, Technology Reports of the Osaka University, V40, P235
  • [2] ENDOH Y, 1990, MAT RES SOC P, V161, P432
  • [3] BAND-GAP RENORMALIZATION AND BAND-FILLING EFFECTS IN A HOMOGENEOUS ELECTRON-HOLE PLASMA IN IN0.53GA0.47AS/INP SINGLE QUANTUM WELLS
    KULAKOVSKII, VD
    LACH, E
    FORCHEL, A
    GRUTZMACHER, D
    [J]. PHYSICAL REVIEW B, 1989, 40 (11): : 8087 - 8090
  • [4] BINDING-ENERGY OF THE SCREENED EXCITON IN TWO-DIMENSIONAL SYSTEMS
    LEE, J
    SPECTOR, HN
    MELMAN, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1893 - 1897
  • [5] ULTRAFAST PHASE RELAXATION OF EXCITONS VIA EXCITON-EXCITON AND EXCITON-ELECTRON COLLISIONS
    SCHULTHEIS, L
    KUHL, J
    HONOLD, A
    TU, CW
    [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (13) : 1635 - 1638
  • [6] TAGUCHI T, 1990, 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3, P1158
  • [7] TAGUCHI T, 1991, J SUPERLATTICES MICR, V43, P98
  • [8] TAGUCHI T, 1991, IN PRESS PHYS REV
  • [9] TAGUCHI T, 1991, IN PRESS APPL PHYS L
  • [10] DIMENSIONALITY DEPENDENCE OF THE BAND-GAP RENORMALIZATION IN TWO-DIMENSIONAL AND 3-DIMENSIONAL ELECTRON-HOLE PLASMAS IN GAAS
    TRANKLE, G
    LEIER, H
    FORCHEL, A
    HAUG, H
    ELL, C
    WEIMANN, G
    [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (04) : 419 - 422