SEMICONDUCTOR SURFACE VARACTOR

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 376 - 387

[3] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[4] MOLL JL, 1959, AUG WESC M

[5] PFANN WG, 1959, P IRE, V47

[6] TAYLOR HE, 1959, J GLASS TECH, P124

[7] NOISE CONSIDERATION OF THE VARIABLE CAPACITANCE PARAMETRIC AMPLIFIER [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (02): : 169 - 179

[8] THE POTENTIAL OF SEMICONDUCTOR DIODES IN HIGH-FREQUENCY COMMUNICATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1099 - 1115

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 376 - 387

[3] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[4] MOLL JL, 1959, AUG WESC M

[5] PFANN WG, 1959, P IRE, V47

[6] TAYLOR HE, 1959, J GLASS TECH, P124

[7] NOISE CONSIDERATION OF THE VARIABLE CAPACITANCE PARAMETRIC AMPLIFIER [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (02): : 169 - 179

[8] THE POTENTIAL OF SEMICONDUCTOR DIODES IN HIGH-FREQUENCY COMMUNICATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1099 - 1115