CHEMICALLY DEPOSITED CU2O THIN-FILM AS AN OXYGEN-PRESSURE SENSOR

被引：22

作者：

RISTOV, M

SINADINOVSKI, G

MITRESKI, M

机构：

[1] Univ Kiril i Metodij, Yugoslavia

来源：

THIN SOLID FILMS | 1988年 / 167卷 / 1-2期

关键词：

Films--Electric Conductivity - Oxygen--Sensors - Pressure Transducers - Semiconductor Materials--Thin Films;

D O I：

10.1016/0040-6090(88)90508-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The conductivity of chemically deposited Cu2O thin films was examined with respect to variations in the oxygen partial pressure, and anomalous behavior was found. The pressure variation of the films' resistances was found to obey a simple relation in the pressure range from 0.1 to 103 Pa. The sensitivity of the resistance to the pressure variation was found to depend on film thickness, temperature and concentration of the solution from which the films were grown.

引用

页码：309 / 316

页数：8

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