STRAIN FIELD DUE TO A SLIP BAND NEAR A GRAIN-BOUNDARY IN AN FE-6AT-PERCENT SI BICRYSTAL .3. SIMULATION OF THE ORIENTATION CONTRAST

被引：6

作者：

POLCAROVA, M

GEMPERLOVA, J

BRADLER, J

机构：

[1] Czechoslovak Acad of Sciences, Praha

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 1991年 / 24卷

关键词：

D O I：

10.1107/S0021889891002054

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The orientation contrast at the head of slip bands at a grain boundary was studied by a modified Schulz technique. The images on the topographs were simulated using kinematical intensity calculations. The stress field of the macrodislocation, which represents the head of the slip band, includes the surface stress relaxation. The Burgers vectors of the macrodislocations were determined.

引用

页码：331 / 339

页数：9

共 12 条

[1]

Armstrong R. W., 1980, Characterization of Crystal Growth Defects by X-Ray Methods. Proceedings of the NATO Advanced Study Institute on Characterization of Crystal Growth Defects by X-Ray Methods, P349

[2] CREATION OF NEW FIELDS OF GENERALIZED WAVES DUE TO PRESENCE OF A DIFFRACTING OBJECT WITHIN A PERFECT CRYSTAL .2. CASE OF AN ISOLATED DEFECT [J].