CHARACTERIZATION OF P-AGGASE2/N-CDS THIN-FILM HETEROJUNCTION

被引：28

作者：

MURTHY, YS

HUSSAIN, OM

NAIDU, BS

REDDY, PJ

机构：

[1] Department of Physics, Sri Venkateswara University, Tirupati

来源：

MATERIALS LETTERS | 1991年 / 10卷 / 11-12期

关键词：

D O I：

10.1016/0167-577X(91)90217-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AgGaSe2 is a potential material for the preparation of Schottky diodes and solar cells, p-AgGaSe2/n-CdS heterojunctions were fabricated and the J-V, C-V and spectral respone characteristics studied. The typical cell parameters obtained were: V(oc) = 510 mV, J(sc) = 13.8 mA/cm2, FF = 0.55 and eta = 4.5%.

引用

页码：504 / 508

页数：5

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