GROWTH AND CHARACTERIZATION OF THIN-FILMS OF THALLIUM(III) OXIDE BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引:13
作者
BERRY, AD
HOLM, RT
MOWERY, RL
TURNER, NH
FATEMI, M
机构
[1] Code 6120, Naval Research Laboratory, Washington
关键词
D O I
10.1021/cm00013a019
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Films containing thallium(III) oxide were grown by organometallic chemical vapor deposition in an oxygen-rich atmosphere on MgO, Al2O3, and Si substrates. Three organothallium precursors were used: thallium acetylacetonate, dimethylthallium acetylacetonate, and cyclopentadienylthallium. Films were characterized by using X-ray diffraction techniques and X-ray photoelectron, Auger electron, and infrared spectroscopies. The results indicate the presence of Tl2O3 as the major component with possible smaller amounts of Tl2CO3. Deposition on Si resulted in the formation of a silicate from interaction between the film and the substrate.
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页码:72 / 77
页数:6
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