P-N JUNCTION PHOTOVOLTAIC EFFECT IN ANODICALLY FORMED OXIDE FILMS OF TITANIUM

被引：20

作者：

HUBER, F

机构：

来源：

关键词：

D O I：

10.1149/1.2425883

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：846 / 847

页数：2

共 14 条

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[2] Becquerel E, 1839, CR HEBD ACAD SCI, V9, P561
[3] HASS G, 1952, VACUUM, V2, P331
[4] GRADED P-N JUNCTIONS INTHIN ANODIC OXIDE FILMS OF TITANIUM
HUBER, F
ROTTERSMAN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3385 - +
[5] HUBER F, 1962, J SOLIDSTATE ELECTRO, V5, P410
[6] LIFSCHITZ J, 1931, Z PHYSIK CHEM A, V155, P431
[7] LUCOVSKY G, 1962, JUN AM PHYS SOC M EV
[8] About a photoelectric effect in thin layers of aluminum and Tantaloxyd.
Rosenthal, Gottfried
[J]. ZEITSCHRIFT FUR PHYSIK, 1936, 99 (9-10): : 607 - 621
[9] PHOTOELEKTRISCHE EIGENSCHAFTEN ANODISCH ERZEUGTER TITANOXYDSCHICHTEN UND NIOBOXYDSCHICHTEN
RUPPRECHT, J
[J]. NATURWISSENSCHAFTEN, 1960, 47 (06) : 127 - 128
[10] P-I-N JUNCTION IN THE ANODIC OXIDE FILM OF TANTALUM
SASAKI, Y
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) : 177 - 186