DIFFUSION-COEFFICIENT AND ELECTROMIGRATION VELOCITY OF COPPER IN THIN SILVER FILMS

被引:22
作者
DIGIACOM.G [1 ]
PERESSIN.P [1 ]
RUTLEDGE, R [1 ]
机构
[1] IBM CORP, SYST PROD DIV, E FISHKILL FACILITY, Hopewell Jct, NY 12533 USA
关键词
D O I
10.1063/1.1663466
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1626 / 1629
页数:4
相关论文
共 7 条
[1]   ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].
BLACK, JR .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1587-&
[2]  
Boltaks B.I., 1963, DIFFUSION SEMICONDUC
[3]   CURRENT-INDUCED MARKER MOTION IN COPPER [J].
GRONE, AR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) :88-93
[4]  
HALL MG, 1969, T METALL SOC AIME, V245, P2476
[5]   ELECTROMIGRATION AND VOID OBSERVATION IN SILVER [J].
HO, PS ;
HUNTINGT.HB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (08) :1319-&
[6]   CURRENT-INDUCED MARKER MOTION IN GOLD WIRES [J].
HUNTINGTON, HB ;
GRONE, AR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) :76-87
[7]  
NANDA M, PRIVATE COMMUNICATIO