CHEMICAL VAPOR-DEPOSITION OF BORON SUBARSENIDE USING HALIDE REACTANTS
被引:8
作者:
CORREIA, LA
论文数: 0引用数: 0
h-index: 0
机构:Delft Univ of Technology, Delft, Neth, Delft Univ of Technology, Delft, Neth
CORREIA, LA
VANOORT, RC
论文数: 0引用数: 0
h-index: 0
机构:Delft Univ of Technology, Delft, Neth, Delft Univ of Technology, Delft, Neth
VANOORT, RC
VANDERPUT, PJ
论文数: 0引用数: 0
h-index: 0
机构:Delft Univ of Technology, Delft, Neth, Delft Univ of Technology, Delft, Neth
VANDERPUT, PJ
机构:
[1] Delft Univ of Technology, Delft, Neth, Delft Univ of Technology, Delft, Neth
来源:
REACTIVITY OF SOLIDS
|
1986年
/
2卷
/
03期
关键词:
FILMS;
-;
Preparation;
SPECTROSCOPY;
D O I:
10.1016/0168-7336(86)80083-3
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Conditions for the chemical vapour deposition of amorphous and crystalline boron subarsenide using halide reactants have been determined. With increasing deposition temperature the arsenic content of the boron subarsenide decreases, as established by X-ray photoelectron spectroscopy.