SLIP IN EPITAXIAL GE-GAAS COMBINATIONS

被引：9

作者：

HOLLOWAY, H

BOBB, LC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.1656577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2467 / &

共 14 条

[1]

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[4]

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[6] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].

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[7]

JAMES RW, 1950, OPTICAL PRINCIPLES D, P60

[8] OBSERVATION OF MISFIT DISLOCATIONS IN GAAS-GE HETEROJUNCTIONS [J].

KRAUSE, GO ;

TEAGUE, EC .

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[9] CLIMB AND GLIDE OF MISFIT DISLOCATIONS [J].

MATTHEWS, JW .

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[10] REFLECTION X-RAY TOPOGRAPHY OF GAAS DEPOSITED ON GE [J].

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