PREPARATION OF ALUMINUM PHOSPHIDE BY SOLUTION-GROWTH METHOD

[1] ON THE PREPARATION OF THE PHOSPHIDES OF ALUMINUM, GALLIUM AND INDIUM [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1960, 82 (07) : 1537 - 1540

[2] UBER DAS AIP - DARSTELLUNG, ELEKTRISCHE UND OPTISCHE EIGENSCHAFTEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 302 - 309

[3] PREPARATION OF GALLIUM ANTIMONIDE BY SOLUTION-GROWTH METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (04) : 317 - &

[4] RABENAU A, 1962, COMPOUND SEMICONDUCT, P181

[5] VAPOR GROWTH OF AIP SINGLE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 467 - &

[6] SONOMURA H, 1966, B U OSAKA PREF A, V15, P91

[7] PREPARATION AND PROPERTIES OF ALUMINUM PHOSPHIDE [J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1963, 25 (03): : 326 - 327

[8] WOLFF G, 1954, PHYS REV, V94, P753

[1] ON THE PREPARATION OF THE PHOSPHIDES OF ALUMINUM, GALLIUM AND INDIUM [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1960, 82 (07) : 1537 - 1540

[2] UBER DAS AIP - DARSTELLUNG, ELEKTRISCHE UND OPTISCHE EIGENSCHAFTEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 302 - 309

[3] PREPARATION OF GALLIUM ANTIMONIDE BY SOLUTION-GROWTH METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (04) : 317 - &

[4] RABENAU A, 1962, COMPOUND SEMICONDUCT, P181

[5] VAPOR GROWTH OF AIP SINGLE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 467 - &

[6] SONOMURA H, 1966, B U OSAKA PREF A, V15, P91

[7] PREPARATION AND PROPERTIES OF ALUMINUM PHOSPHIDE [J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1963, 25 (03): : 326 - 327

[8] WOLFF G, 1954, PHYS REV, V94, P753