DEEP LEVEL PROFILES AT SUBSTRATE-EPITAXIAL INTERFACES IN GALLIUM-PHOSPHIDE

[1] BARANOWSKI JM, 1968, PHYS REV, V267, P758

[2] DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 589 - +

[3] DARBY DB, 1978, 9TH P INT C EL MICR

[4] NICKEL, A PERSISTENT INADVERTENT CONTAMINANT IN DEVICE-GRADE VAPOR EPITAXIALLY GROWN GALLIUM-PHOSPHIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (18) : 2545 - 2554

[5] DEAN PJ, 1978, IEEE M LEDS LASERS S

[6] HAMILTON B, 1974, I PHYS C SERIES, P22

[7] KATO T, 1964, JPN J APPL PHYS, V3, P377

[8] Kukimoto H., 1973, PHYS REV B, V7, P6

[9] Peaker A. R., 1972, Journal of Crystal Growth, V13-14, P651, DOI 10.1016/0022-0248(72)90536-2

[10] PEAKER AR, 1977, I PHYS C SERIES, P326

[1] BARANOWSKI JM, 1968, PHYS REV, V267, P758

[2] DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 589 - +

[3] DARBY DB, 1978, 9TH P INT C EL MICR

[4] NICKEL, A PERSISTENT INADVERTENT CONTAMINANT IN DEVICE-GRADE VAPOR EPITAXIALLY GROWN GALLIUM-PHOSPHIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (18) : 2545 - 2554

[5] DEAN PJ, 1978, IEEE M LEDS LASERS S

[6] HAMILTON B, 1974, I PHYS C SERIES, P22

[7] KATO T, 1964, JPN J APPL PHYS, V3, P377

[8] Kukimoto H., 1973, PHYS REV B, V7, P6

[9] Peaker A. R., 1972, Journal of Crystal Growth, V13-14, P651, DOI 10.1016/0022-0248(72)90536-2

[10] PEAKER AR, 1977, I PHYS C SERIES, P326