FILAMENTARY SAPPHIRE .3. GROWTH OF VOID-FREE SAPPHIRE FILAMENT AT RATES UP TO 3.0 CMMIN

被引:14
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POLLOCK, JTA
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10.1007/BF00549907
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T [工业技术];
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08 ;
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[1]   GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .3. THEORY [J].
CHALMERS, B ;
LABELLE, HE ;
MLAVSKY, AI .
MATERIALS RESEARCH BULLETIN, 1971, 6 (08) :681-&
[2]   GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .1. -SAPPHIRE FILAMENTS [J].
LABELLE, HE ;
MLAVSKY, AI .
MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :571-&
[4]   WINDOWLESS PORT USING BERNOULLI PRINCIPLE FOR HIGH TEMPERATURE FURNACES [J].
LABELLE, HE ;
POLLOCK, JTA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (01) :160-&
[5]  
LABELLE HE, TO BE PUBLISHED
[6]  
MEHAN RL, 1967, MODERN COMPOSITE MAT, P581
[7]  
POLLOCK J, TO BE PUBLISHED
[8]   FILAMENTARY SAPPHIRE .2. FRACTURE STRENGTH IN TENSION [J].
POLLOCK, JTA .
JOURNAL OF MATERIALS SCIENCE, 1972, 7 (06) :649-&
[9]   FILAMENTARY SAPPHIRE .1. GROWTH AND MICROSTRUCTURAL CHARACTERIZATION [J].
POLLOCK, JTA .
JOURNAL OF MATERIALS SCIENCE, 1972, 7 (06) :631-&
[10]  
Tiller W.A., 1963, The Art and Science of Growing Crystals, P276