A QUANTITATIVE STUDY OF FERMI LEVEL PINNING AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE

被引：40

作者：

CHAZALVIEL, JN ^{[1
]}

TRUONG, TB ^{[1
]}

机构：

[1] UNIV PARIS 11, CHIM PHYS LAB, F-91405 ORSAY, FRANCE

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1980年 / 114卷 / 02期

关键词：

D O I：

10.1016/S0022-0728(80)80455-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：299 / 303

页数：5

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[4] PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING [J].

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[5] SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION [J].

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Coates G.E., 1968, PRINCIPLES ORGANOMET

[9] SEMICONDUCTOR ELECTRODES .24. BEHAVIOR AND PHOTOELECTROCHEMICAL CELLS BASED ON P-TYPE GA-ARSENIC IN AQUEOUS-SOLUTIONS [J].

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[10]

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