ELECTRICAL AND OPTICAL MODELING OF II-VI SEMICONDUCTOR DIODE-LASERS

被引：12

作者：

MENSZ, PM

机构：

[1] Philips Laboratories, Briarcliff Manor

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90893-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The electrical and optical operation of ZnCdxSe1-x/ZnSe/ZnSySe1-y and Zn1-xCdxSe/ZnSySe1-y/Zn1-zMgzSuSe1-u quantum-well blue-green injection lasers were studied by numerical simulation. The physical model in this study is based on the self-consistent solution of Poisson's equation, the current continuity equations, including the thermionic emission theory for carrier transport across heterojunctions, the photon rate equation and the scalar wave equation. The optical gain of strained quantum well lasers was calculated using k.p theory based on the inter-band electron-hole pair recombination. Good agreement was obtained between the experimental and the calculated Zn1-xCdxSe/ZnSySe1-y/Zn1-zMgzSuSe1-u laser characteristics, over a wide temperature range of 85 to 394 K, without including excitonic effects.

引用

页码：697 / 702

页数：6

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