HIGH T-C BI-EPITAXIAL JUNCTIONS AND DC-SQUIDS STRUCTURED BY FOCUSED ION-BEAM ETCHING

被引：1

作者：

IJSSELSTEIJN, RPJ ^{[1
]}

HILGENKAMP, JWM ^{[1
]}

VELDHUIS, D ^{[1
]}

FLOKSTRA, J ^{[1
]}

ROGALLA, H ^{[1
]}

TRAEHOLT, C ^{[1
]}

ZANDBERGEN, HW ^{[1
]}

机构：

[1] NATL CTR HREM,MAT SCI LAB,2628 AL DELFT,NETHERLANDS

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期

关键词：

D O I：

10.1109/77.403101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter beta(L) can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 mu phi(0) . Hz(-1/2) (1.8 . 10(-29) J . Hz(-1)) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).

引用

页码：2513 / 2516

页数：4

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