PROPERTIES OF TINX FILMS REACTIVELY SPUTTERED IN AN ARGON-NITROGEN ATMOSPHERE

被引：24

作者：

POSADOWSKI, W ^{[1
]}

KROLSTEPNIEWSKA, L ^{[1
]}

ZIOLOWSKI, Z ^{[1
]}

机构：

[1] INST IRON MET,PL-44100 GLIWICE,POLAND

来源：

THIN SOLID FILMS | 1979年 / 62卷 / 03期

关键词：

D O I：

10.1016/0040-6090(79)90009-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of the resistivity and temperature coefficient of resistivity (TCR) of TiNx films on nitrogen pressure is described. The partial nitrogen pressure was varied from 10-5 Torr to 2×10-4 Torr. The maximum value of the resistivity (216 μΩ cm) and the lowest negative value of TCR (-33ppm K-1) were obtained in the nitrogen pressure range (2-4)×10-5 Torr. The minimum value of the resistivity (44 μΩ cm) and the highest positive value of the TCR (1160 ppm K-1 were obtained in the nitrogen pressure range (4-10)×10-5 Torr. The influence of aging temperature up to 573 K on the resistance changes are shown. X-ray diffraction analysis indicated the presence of oriented or non-oriented TiN in these films. © 1979.

引用

页码：347 / 351

页数：5

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