ANALYSIS OF NORMAL-INCIDENT ABSORPTION IN P-TYPE QUANTUM-WELL INFRARED PHOTODETECTORS

被引：38

作者：

MAN, P

PAN, DS

机构：

[1] Department of Electrical Engineering, University of California at Los Angeles, Los Angeles

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 23期

关键词：

D O I：

10.1063/1.108482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Normal-incident absorption in the recently-demonstrated, p-type quantum-well infrared photodetectors is analyzed with the k.p theory, under the envelope-function approximation. A first-principles calculation of the infrared-absorption spectra is performed with no adjustable parameter. The responsivity is evaluated from the calculated normal-incident absorption and the experimentally-derived photoconductive gain. Good agreement is obtained with measurements at lambda < lambda(c). The bandwidths of the infrared-absorption spectra are found to be limited by spin-orbit splitting as well as the overlap integrals.

引用

页码：2799 / 2801

页数：3

共 19 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].