SINGLE-PARTICLE ELECTRON LIGHT-SCATTERING IN HEAVILY DOPED SEMICONDUCTORS

被引：9

作者：

IPATOVA, IP

SUBASHIEV, AV

VOITENKO, VA

机构：

来源：

JOURNAL OF RAMAN SPECTROSCOPY | 1981年 / 10卷 / JAN期

关键词：

D O I：

10.1002/jrs.1250100143

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

引用

页码：221 / 223

页数：3

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RIVISTA DEL NUOVO CIMENTO, 1979, 2 (05) :1-87

[6] ELECTRONIC RAMAN-SCATTERING AND METAL-INSULATOR-TRANSITION IN DOPED SILICON [J].

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[9]

SHKLOVSKI BI, 1979, ELECTRONIC PROPERTIE

[10]

Voitenko V. A., 1979, Light scattering in solids, P83

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