METAL-SEMICONDUCTOR BARRIER-HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD-DEGENERATE 1-CARRIER SYSTEM

被引:17
作者
GOODMAN, AM
PERKINS, DM
机构
关键词
D O I
10.1063/1.1713221
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3351 / &
相关论文
共 12 条
[1]   ON THE THEORY OF THE A-C IMPEDANCE OF A CONTACT RECTIFIER [J].
BARDEEN, J .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :428-434
[2]   THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J].
DEWALD, JF .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :615-639
[4]  
HENISCH HK, 1955, RECTIFYING SEMICONDU, pCH2
[5]  
HENISCH HK, 1955, RECTIFYING SEMICONDU, pCH7
[6]   ACCURATE SOLUTION OF AN IDEALIZED ONE-CARRIER METAL-SEMICONDUCTOR JUNCTION PROBLEM [J].
MACDONALD, JR .
SOLID-STATE ELECTRONICS, 1962, 5 (JAN-F) :11-37
[7]  
MCDOUGALL J, 1938, T ROY SOC LONDON, VA237, P67
[8]   Simplified and advanced Theory of the Boundary Layer Rectifiers [J].
Schottky, W. .
ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10) :539-592
[9]   SPACE CHARGE CALCUATIONS FOR SEMICONDUCTORS [J].
SEIWATZ, R ;
GREEN, M .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1034-1040
[10]   BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J].
SPITZER, WG ;
MEAD, CA .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :3061-+